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STD10NM60ND

Part No STD10NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 8A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 577pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102840-STD10NM60ND
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD10NM60ND CAD Model

Description

The STD10NM60ND is a high-performance N-channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and innovative product solutions. This MOSFET is designed to meet a wide range of energy-efficient power management requirements, making it an ideal choice for switch-mode power supplies, LED drivers, DC-DC converters, and other high-efficiency power management applications.

Key Features

  • Low On-Resistance: The STD10NM60ND features a low on-state resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency.
  • High Switching Performance: With fast switching speeds, this MOSFET is well-suited for high-frequency operations, ensuring reduced switching losses.
  • High Voltage Capability: It is capable of handling high drain-source voltages up to 600V, providing a wide safety margin for fluctuating operating conditions.
  • Enhanced Thermal Performance: The device boasts excellent thermal characteristics, enabling reliable performance even under high temperature conditions.
  • Robust Design: The STD10NM60ND is built to withstand harsh environments and is characterized by its high ruggedness and durability.

Applications

The versatility of the STD10NM60ND MOSFET makes it suitable for a wide array of applications. Its high efficiency and robustness are particularly beneficial in:

  • Power supplies for consumer electronics
  • LED lighting systems
  • Telecommunication equipment
  • Industrial power management solutions
  • Automotive applications

Technical Specifications

  • Drain-source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 10A
  • Power Dissipation (PD): 45W
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-252 (DPAK)

With its exceptional performance and reliability, the STD10NM60ND from STMicroelectronics is a superior choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8593 $60.1510
145+ $0.8039 $116.5655
225+ $0.7762 $174.6450
325+ $0.7207 $234.2275
420+ $0.6930 $291.0600
525+ $0.6653 $349.2825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,060 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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