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STD11N65M2

Part No STD11N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12.5nC @ 10V
Max Input Capacitance 410pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 85W (Tc)
Maximum Rds On at Id,Vgs 670 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 132392-STD11N65M2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD11N65M2 CAD Model

Description

STMicroelectronics STD11N65M2 - N-Channel MOSFET

The STD11N65M2 from STMicroelectronics is a high-performance N-channel power MOSFET designed for a wide range of applications. This device is part of STMicroelectronics' MDmesh™ M2 series, which utilizes an innovative proprietary vertical structure that delivers extremely low on-resistance and reduced gate charge, enhancing the overall efficiency of the MOSFET.

The STD11N65M2 operates at 650V, making it suitable for high voltage applications. It has a continuous drain current of 11A, which allows it to handle significant power without overheating. The device is optimized for use in high-efficiency converters, power supplies, and a variety of other electronic circuits that require power control.

This MOSFET features a low threshold drive, which can be easily driven by logic level voltages, thus simplifying the circuit design by eliminating the need for a driver. Its low on-resistance (R<sub>DS(on)) minimizes conduction losses, while the low gate charge (Q<sub>g) reduces switching losses, providing an excellent efficiency profile for power management solutions.

With its TO-252 (DPAK) package, the STD11N65M2 ensures a compact footprint on the PCB while maintaining good thermal performance. The device is also characterized by a 100% avalanche tested ruggedness that ensures reliability and durability even under harsh conditions. Additionally, the MOSFET is compliant with the RoHS directive, making it suitable for use in environmentally sensitive applications.

Key features of the STD11N65M2 include:

  • Voltage rating of 650V for high-voltage operations
  • Continuous drain current of 11A for robust power handling
  • Low threshold voltage for easy drive capability
  • High dv/dt capability ensuring reliability under fast switching
  • Low input capacitance and gate charge for efficient switching
  • TO-252 (DPAK) package for efficient space utilization and thermal management
  • Compliance with industrial standards and RoHS directive

The STD11N65M2 is a testament to STMicroelectronics' commitment to providing energy-efficient solutions for a sustainable future. Its performance and reliability make it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1893 $53.5185
105+ $0.9758 $102.4590
160+ $0.9453 $151.2480
220+ $0.9148 $201.2560
285+ $0.8844 $252.0540
380+ $0.7929 $301.3020
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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