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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 850pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 104565-STD11NM60ND
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STD11NM60ND
Introduction Date April 23, 2008
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Ultra Librarian 3D Model Ultra Librarian STD11NM60ND CAD Model

Description

STD11NM60ND - N-channel 600V - 0.38 Ohm - 11A - DPAK/IPAK MDmesh™ II Power MOSFET

The STD11NM60ND is a cutting-edge N-channel Power MOSFET presented by STMicroelectronics, designed to meet a wide range of high-efficiency applications. This device is part of the MDmesh™ II series, which utilizes an innovative proprietary vertical structure. The structure allows for the optimization of on-resistance, dynamic performance, and energy efficiency, making the STD11NM60ND an ideal choice for switch-mode power supplies (SMPS), lighting, welding, and high-performance drives.

With a drain-source voltage (V<sub>DS) of 600V, the STD11NM60ND can handle high voltage applications with ease. Its low on-resistance of just 0.38 Ohm minimizes conduction losses, while the 11A current rating ensures robust performance for a wide range of high-power tasks. The device is encapsulated in a DPAK/IPAK package, which offers a compact footprint while still providing excellent thermal performance.

One of the key features of the STD11NM60ND is its Zener-protected gate, which provides enhanced reliability and safeguards the device against over-voltage conditions. This feature is particularly useful in applications that may be exposed to unpredictable voltage spikes, ensuring long-term stability and performance.

The MDmesh™ II technology also offers an improved recovery diode, which is essential for applications with high switching frequencies. This results in reduced switching losses, enabling higher efficiency and lower EMI emissions. As a result, the STD11NM60ND is an excellent choice for designers looking to create environmentally friendly solutions that meet stringent energy-saving standards.

STMicroelectronics has also ensured that the STD11NM60ND is fully RoHS compliant and Halogen-free, reflecting the company's commitment to environmental sustainability. The device's robustness and reliability, combined with its energy-efficient performance, make it a top choice for engineers and designers looking to integrate a high-performance Power MOSFET into their applications.

Overall, the STD11NM60ND from STMicroelectronics offers a compelling combination of high voltage capability, low on-resistance, high current capacity, and advanced protection features, all packed into a space-saving package ideal for a multitude of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.2675 $57.0700
9+ $11.7067 $105.3603
14+ $11.3409 $158.7726
19+ $10.9750 $208.5250
24+ $10.6092 $254.6208
32+ $9.5117 $304.3744
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 17,000 pieces
MOQ: 4 pcs
Order Increment : 1 piece
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