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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 100 V
Power Dissipation (Max) 92W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package D-PAK (TO-252)
Case / Package TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number STD13
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-STD13N60M6TR
Standard Package 2,500
Win Source Part Number 1324354-STD13N60M6
Ultra Librarian 3D Model Ultra Librarian STD13N60M6 CAD Model

Description

Introducing the STD13N60M6 Power MOSFET by STMicroelectronics

The STD13N60M6 is a cutting-edge power MOSFET brought to you by STMicroelectronics, a global semiconductor leader renowned for their innovative and reliable products. This high-performance MOSFET is part of ST's MDmesh™ M6 series, which is designed to meet the stringent requirements of today's power electronic applications. The STD13N60M6 is particularly suited for high-efficiency solutions in a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and solar inverters.

Key Features

  • Advanced Technology: The STD13N60M6 utilizes ST's proprietary MDmesh™ M6 technology, which combines a vertical structure with a new strip layout to achieve extremely low on-resistance and high dv/dt capability.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600V, this MOSFET is capable of handling high voltage applications with ease, providing a wide margin for safety and reliability.
  • Low On-Resistance: The device boasts an exceptionally low on-resistance (R<sub>DS(on)) of only 0.280 ohms, which minimizes conduction losses and improves overall efficiency.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) facilitates faster switching speeds, reducing switching losses and enhancing performance in high-frequency circuits.
  • Enhanced Thermal Performance: The package design and internal structure offer excellent thermal performance, ensuring reliability and longevity even under high-temperature operating conditions.

Applications

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Systems
  • Welding Equipment
  • Solar Inverters
  • Power Factor Correction Circuits
  • High-Efficiency DC-DC Converters

The STD13N60M6 is not only a testament to STMicroelectronics' commitment to energy efficiency and innovation but also an essential component for engineers and designers looking to create high-performance power conversion systems. With its robust design, superior electrical characteristics, and versatility, the STD13N60M6 is an excellent choice for your next high-voltage application.

For detailed specifications, application notes, and additional resources, visit the STMicroelectronics product page for the STD13N60M6.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5712 $51.4080
215+ $0.4687 $100.7705
335+ $0.4540 $152.0900
460+ $0.4394 $202.1240
590+ $0.4247 $250.5730
790+ $0.3808 $300.8320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 657 pieces
MOQ: 90 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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