The STD19N3LLH6AG is a state-of-the-art N-channel Power MOSFET produced by STMicroelectronics, one of the global leaders in semiconductor technology. This device is part of the STripFET™ VI DeepGATE™ technology line, which is renowned for its high switching performance and improved power efficiency. The STD19N3LLH6AG is designed to meet the rigorous demands of modern electronic circuits, providing a combination of low on-resistance and low gate charge.

Key Features

• Low Threshold Drive: The device features a low gate threshold voltage, making it suitable for low voltage applications and ensuring easy driveability.
• High Switching Efficiency: With its advanced DeepGATE™ technology, the STD19N3LLH6AG offers fast switching speeds, which enhances the overall efficiency of power conversion systems.
• Low On-Resistance (R<sub>DS(on)): The MOSFET boasts an exceptionally low on-state resistance, which minimizes conduction losses and improves thermal performance.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh operating conditions.
• Application Versatility: This component is suitable for a wide range of applications, including power management in portable devices, DC-DC converters, motor control circuits, and other high-efficiency power solutions.

Product Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 30V Continuous Drain Current (I<sub>D) 30A Power Dissipation (P<sub>D) 80W Operating Temperature Range -55°C to 175°C

The STD19N3LLH6AG is encapsulated in a surface-mount DPAK package, which is ideal for compact designs. Its robust package design and high thermal performance make it a reliable choice for high-density power applications. With its advanced features and proven technology, the STD19N3LLH6AG from STMicroelectronics is a preferred choice for engineers looking to optimize the performance and efficiency of their power management systems.