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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 7.7nC @ 10V
Max Input Capacitance 160pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 16 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 066308-STD1NK80Z-1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STD1NK80
Introduction Date March 23, 1998
ECCN EAR99
Country of Origin China
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian STD1NK80Z-1 CAD Model

Description

Overview of STD1NK80Z-1

The STD1NK80Z-1 is a high-performance N-channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver efficient power management and is optimized for a wide range of applications, including switch-mode power supplies, converters, motor control circuits, and general-purpose switching applications.

Key Features

  • Device Type: N-channel Power MOSFET
  • Voltage Rating: The STD1NK80Z-1 can handle drain-source voltages up to 800V, making it suitable for high-voltage applications.
  • Current Rating: It has a continuous drain current of 1A, providing sufficient current handling for various electronic circuits.
  • RDS(on): The device boasts a low on-state resistance of 10 Ohm (typical), which translates to reduced power losses and improved efficiency.
  • Package: Housed in a TO-252 (DPAK) package, the STD1NK80Z-1 offers a compact footprint while ensuring good thermal performance.
  • Robustness: It is characterized by high ruggedness and reliability, making it a suitable choice for demanding environments.

Performance and Efficiency

The STD1NK80Z-1 employs STMicroelectronics' proprietary MDmesh™ technology, which provides a perfect blend of low gate charge, low crss, and high dv/dt capability. This technology ensures that the MOSFET operates with high efficiency, minimal switching losses, and excellent thermal characteristics, even under harsh conditions.

Applications

Thanks to its robust design and electrical characteristics, the STD1NK80Z-1 is an excellent choice for a variety of applications, including:

  • LED lighting systems
  • Power supply units
  • DC-DC converters
  • Motor control circuits
  • High-efficiency switching applications

Reliability and Compliance

STMicroelectronics ensures that the STD1NK80Z-1 meets stringent quality and reliability standards. The device is compliant with RoHS and Halogen-free requirements, making it an environmentally friendly option for designers looking to create eco-conscious electronic products.

Overall, the STD1NK80Z-1 N-channel MOSFET from STMicroelectronics is a versatile component that offers a balance of performance, efficiency, and reliability, suitable for a wide range of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4683 $65.5620
340+ $0.3842 $130.6280
525+ $0.3725 $195.5625
720+ $0.3596 $258.9120
930+ $0.3480 $323.6400
1,245+ $0.3118 $388.1910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 15,000 pieces
MOQ: 140 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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