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STD3NK60ZD

Part No STD3NK60ZD
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 2.4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 11.8nC @ 10V
Max Input Capacitance 311pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102884-STD3NK60ZD
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD3NK60ZD CAD Model

Description

STD3NK60ZD - N-Channel 600V - 2.2Ohm - 3A - DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET

The STD3NK60ZD is a high voltage MOSFET designed to offer the best performance for a wide range of applications. Manufactured by STMicroelectronics, a global semiconductor leader, this Power MOSFET is part of their SuperMESH™ series, known for its excellent RDS(on) area ratio and reduced gate charge. These features make the STD3NK60ZD ideal for applications that require high efficiency and power density.

This N-Channel MOSFET operates at 600V, providing a robust and reliable solution for high voltage requirements. With an on-resistance of just 2.2Ohm and a continuous current rating of 3A, it can handle significant power without overheating, thanks to its Zener protection that enhances reliability against transients.

The STD3NK60ZD comes in a compact DPAK/IPAK package, which not only saves space but also ensures improved thermal performance. This packaging is suitable for automated assembly processes, making it a convenient choice for mass production. The device is also RoHS compliant, adhering to environmental standards that restrict the use of hazardous substances in electronic components.

Key features of the STD3NK60ZD include:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Zener-protected

Applications for this MOSFET are diverse and include:

  • Switching applications
  • Power supplies
  • Motor control
  • Lighting
  • Inverters

The STD3NK60ZD is a testament to STMicroelectronics' commitment to providing advanced electronic components that push the boundaries of efficiency, reliability, and performance. Whether for industrial, consumer, or automotive applications, this MOSFET is engineered to meet the most demanding electrical specifications and environmental standards.

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