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STD4NS25T4

Part No STD4NS25T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 4A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 355pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 1.1 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102895-STD4NS25T4
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian STD4NS25T4 CAD Model

Description

Product Overview: STD4NS25T4 MOSFET from STMicroelectronics

The STD4NS25T4 is a cutting-edge N-channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This device is designed to meet a wide range of power management requirements, particularly in the automotive industry, and is well-suited for a variety of applications, including DC-DC converters, load switches, and motor control circuits.

Key Features

  • Device Type: N-channel MOSFET
  • Package: DPAK (TO-252) - A surface-mount package that offers good thermal performance and is suitable for compact PCB layouts.
  • Drain-source Voltage (VDS): 250V - Provides a high breakdown voltage suitable for applications with higher operating voltages.
  • Continuous Drain Current (ID): 4A - Capable of handling significant current for a range of power applications.
  • On-resistance (RDS(on)): 0.85 Ohm - Low on-resistance ensures reduced power dissipation and improved efficiency.
  • Gate Charge (Qg): 10 nC - A low gate charge that allows for fast switching and reduced switching losses.

Performance and Efficiency

The STD4NS25T4 MOSFET is engineered for performance and efficiency. With its low on-resistance and gate charge, it minimizes conduction and switching losses, which is crucial for power-sensitive applications. The device's high drain-source voltage rating allows it to operate safely in circuits with high voltage requirements, providing designers with a versatile and robust power management solution.

Applications

This MOSFET is suitable for a broad range of applications, including:

  • Switching regulators
  • Power management systems
  • DC-DC converters
  • Motor control units
  • Automotive applications
  • High-efficiency power supplies

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products that meet stringent industry standards. The STD4NS25T4 MOSFET is no exception, offering excellent reliability and performance for sophisticated electronic systems. Whether you're designing for automotive, industrial, or consumer applications, this MOSFET will help you achieve efficient and reliable power management.

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7394 $59.1520
195+ $0.6068 $118.3260
295+ $0.5877 $173.3715
410+ $0.5687 $233.1670
530+ $0.5498 $291.3940
705+ $0.4930 $347.5650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,390 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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