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Same model may have multiple batches, images only for reference.
SI6913DQ-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI6913DQ-T1-E3

Part No SI6913DQ-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual P-Channel 12 V (D-S) MOSFET
Datasheet
SI6913DQ-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 12V
Current - Continuous Drain (Id) @ 25°C 4.9A
Rds On (Maximum) @ Id, Vgs 21 mOhm @ 5.8A, 4.5V
Vgs(th) (Maximum) @ Id 900mV @ 400μA
Gate Charge (Qg) (Maximum) @ Vgs 28nC @ 4.5V
Power - Max 830mW
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-TSSOP (0.173", 4.40mm Width)
Manufacturer Package 8-TSSOP
Win Source Part Number 1249370-SI6913DQ-T1-E3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Family Name Si6913DQ
Introduction Date September 10, 2003
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI6913DQ-T1-E3 CAD Model

Description

The Vishay Si6913DQ-T1-E3 is a dual P-channel trench MOSFET designed for use in a variety of electronic applications.

  • Maximum Drain-Source Voltage: 12V
  • Maximum Continuous Drain Current: 4.9A
  • Gate: Logic-level gate
  • On-Resistance: Low on-resistance
  • Ideal For: Low-voltage applications
  • Maximum Power Dissipation: 830mW
  • Maximum Gate-Source Voltage: ±8V

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5249 $53.3715
80+ $1.2512 $100.0960
125+ $1.2121 $151.5125
175+ $1.1730 $205.2750
225+ $1.1339 $255.1275
300+ $1.0166 $304.9800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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