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Same model may have multiple batches, images only for reference.
IPI80N06S405AKSA2 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPI80N06S405AKSA2

Part No IPI80N06S405AKSA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL_55/60V / N-Channel 60 V 80A (Tc) 107W (Tc) Through Hole PG-TO262-3-1
Datasheet
IPI80N06S405AKSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 25 V
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI80N06
Standard Package 500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1065269-IPI80N06S405AKSA2
Ultra Librarian 3D Model Ultra Librarian IPI80N06S405AKSA2 CAD Model

Description

The OptiMOS™ 1065269-IPI80N06S405AKSA2 is a N-Channel MOSFET designed for discrete semiconductor applications.

  • Drain to Source Voltage Rating: 60V
  • Continuous Drain Current Rating: 80A @ 25°C
  • On-Resistance: 5.7mOhm @ 80A and 10V
  • Mounting: Through hole
  • Package: TO-262-3 Long Leads, I²Pak
  • Gate Charge: 81nC @ 10V
  • Input Capacitance: 6500pF @ 25V
  • Operating Temperature Range: -55°C to 175°C
  • Manufacturer: Infineon Technologies
  • Application: Automotive

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