The STD65N55F3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is designed for applications that require efficient power conversion and switching with a focus on minimizing on-state resistance and maximizing power density.

Key Features

• Drain-source Voltage (V<sub>DS): 55V - This indicates the maximum voltage the MOSFET can tolerate between its drain and source terminals when the device is off.
• Continuous Drain Current (I<sub>D): 65A - The STD65N55F3 can handle a continuous current of up to 65 amperes, making it suitable for high-current applications.
• On-state Resistance (R<sub>DS(on)): 8.7 mΩ - With a very low on-state resistance, this MOSFET ensures minimal power loss during operation, enhancing the overall efficiency of the application it is used in.
• Gate Charge (Q<sub>g): 37 nC - The gate charge is relatively low, which means that the device can switch on and off quickly, beneficial for high-frequency switching applications.
• Maximum Power Dissipation (P<sub>D): 68W - The device can dissipate up to 68 watts of power under specified conditions, indicating its ability to handle significant thermal loads.

Applications

The STD65N55F3 MOSFET is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• DC-DC converters
• Motor control
• Automotive applications
• Power management solutions

Quality and Reliability

STMicroelectronics is known for its commitment to quality and reliability. The STD65N55F3 is no exception, as it is designed to meet stringent industry standards, ensuring a reliable performance in even the most demanding situations. Its robust package and silicon technology make it a preferred choice for designers looking for a dependable power MOSFET solution.