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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 5800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 19.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031159-STD70N10F4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STD70N10F4
Introduction Date November 12, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian STD70N10F4 CAD Model

Description

The STD70N10F4 is a state-of-the-art N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This MOSFET is a part of STMicroelectronics' STripFET™ F4 series, which represents the company's commitment to providing energy-efficient solutions to the electronics market.

The STD70N10F4 is built with advanced STripFET™ F4 technology, which enables the device to achieve an optimal balance between low on-resistance (R<sub>DS(on)) and low gate charge (Q<sub>g). This balance ensures high efficiency in a wide range of power conversion applications, making it suitable for use in switch-mode power supplies (SMPS), high-efficiency DC-DC converters, motor control applications, and more.

Key Features:

  • Low Threshold Drive: The device can be driven at a low gate threshold voltage, which makes it compatible with a variety of logic-level drive circuits and microcontrollers.
  • High Switching Performance: With rapid switching capabilities, the STD70N10F4 is ideal for high-frequency applications, reducing losses and improving overall efficiency.
  • Low On-Resistance: The low R<sub>DS(on) characteristic minimizes conduction losses, enhancing performance in applications where low voltage drop is crucial.
  • 100% Avalanche Tested: Ensures reliability and robustness in applications where the device may be subjected to high-energy pulses.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • High-Efficiency DC-DC Converters
  • Motor Control Systems
  • Power Management Solutions

With a maximum continuous drain current (I<sub>D) of 80 A and a drain-source voltage (V<sub>DS) of 100 V, the STD70N10F4 is capable of handling high current and voltage levels, which is essential for power-intensive applications. Its robustness is further enhanced by a maximum junction temperature of 175°C, allowing for operation in high-temperature environments.

In conclusion, the STD70N10F4 from STMicroelectronics is a versatile and efficient MOSFET that offers designers a high-performance solution for a wide range of power applications. Its cutting-edge technology and robust design make it a reliable choice for engineers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.1424 $56.5632
44+ $2.5784 $113.4496
68+ $2.4978 $169.8504
93+ $2.4173 $224.8089
120+ $2.3367 $280.4040
161+ $2.0950 $337.2950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 32,000 pieces
MOQ: 18 pcs
Order Increment : 1 piece
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