STD7NM60N-1 - N-channel 600 V, 7 A MDmesh™ M2 Power MOSFET

The STD7NM60N-1 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed using the innovative MDmesh™ M2 technology. This power MOSFET is well-suited for a wide array of high-efficiency applications, thanks to its outstanding on-state resistance (R<sub>DS(on)) and superior switching performance.

Key Features

• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600 V, the STD7NM60N-1 is capable of handling high voltage applications, making it ideal for electronic equipment that requires high energy efficiency.
• Low On-Resistance: The device's low R<sub>DS(on) ensures minimal power loss during operation, contributing to the overall efficiency of the system it is integrated into.
• High Current Rating: A continuous drain current (I<sub>D) of 7 A allows for robust performance in a variety of power-intensive applications.
• Reduced Gate Charge (Q<sub>g): The optimized gate charge enables faster switching speeds, which is beneficial in reducing switching losses.
• Enhanced dv/dt Capability: This feature ensures reliability under harsh operating conditions, making the MOSFET suitable for rugged applications.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and longevity in the field.

Applications

The STD7NM60N-1 Power MOSFET is versatile and can be used in a variety of applications, including:

• Switching applications
• Power supplies
• Power adapters
• LED lighting solutions
• Motor drives
• Consumer electronics

Quality and Reliability

STMicroelectronics is committed to providing high-quality products. The STD7NM60N-1 is no exception, offering excellent reliability and performance consistency. This device is a testament to STMicroelectronics' dedication to innovation and excellence in the field of power electronics.