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STF24NM65N

Part No STF24NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 19A TO-220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2500pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 005564-STF24NM65N
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STF24NM65N CAD Model

Description

STF24NM65N - STMicroelectronics N-channel MOSFET

The STF24NM65N is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This device is designed with the intent to cater to a wide range of applications, including but not limited to, switch-mode power supplies (SMPS), high-efficiency DC-DC converters, motor control applications, and LED lighting solutions.

Constructed with STMicroelectronics' advanced MDmesh™ technology, the STF24NM65N boasts a very low on-resistance (RDS(on)) combined with a low gate charge (Qg), which results in a highly efficient power conversion process. This technology leverages a vertical structure that enhances the device's capability to handle high current and voltage without compromising its performance, making it an ideal choice for power applications that demand high efficiency and reliability.

The STF24NM65N operates at a maximum continuous drain current of 22 A and offers a drain-source voltage (VDS) of up to 650 V, which provides ample headroom for most high-voltage applications. Its threshold voltage (Vth) is specified to be in the range of 3.0 V to 4.0 V, ensuring that it can be easily driven by standard control circuits.

With a maximum junction temperature of 150°C, the STF24NM65N is designed to sustain robust operation even under strenuous conditions. Additionally, its 100% avalanche tested design ensures that it can handle repetitive load surges without failure, providing an extra layer of reliability which is essential for power electronics devices.

For ease of integration, the STF24NM65N is available in a TO-220FP package, which is widely used in the industry and known for its good thermal performance. This package allows for efficient heat dissipation, ensuring that the MOSFET operates within its safe temperature range even under high power conditions.

In conclusion, the STF24NM65N from STMicroelectronics is a robust and efficient solution for designers looking to enhance the performance and reliability of their power management systems. Its advanced technology and thermal characteristics make it a versatile component suitable for a variety of demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9358 $58.0740
75+ $1.5881 $119.1075
115+ $1.5385 $176.9275
160+ $1.4888 $238.2080
205+ $1.4403 $295.2615
270+ $1.2913 $348.6510
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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