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STF32N65M5

Part No STF32N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 3320pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 119 mOhm @ 12A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1102959-STF32N65M5
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STF32N65M5 CAD Model

Description

STF32N65M5 - N-channel 650 V, 0.036 ohm typ., 31 A MDmesh™ M5 Power MOSFET in TO-220FP package

STMicroelectronics introduces the STF32N65M5, a high-performance N-channel Power MOSFET, as part of their MDmesh™ M5 series. This device is designed to meet the stringent requirements of today's power electronic applications, providing high efficiency and reliability.

The STF32N65M5 features state-of-the-art MDmesh™ M5 technology, which combines the benefits of reduced on-resistance, high dv/dt capability, and excellent switching performance, making it ideal for a wide range of high-voltage applications. With a breakdown voltage of 650 V, it is particularly suited for high-voltage power supplies, lighting applications, welding equipment, solar inverters, and other industrial applications requiring high efficiency and power density.

With a typical on-resistance of just 0.036 ohms and a continuous current rating of 31 A, this MOSFET ensures minimal conduction losses and is capable of handling significant power without overheating. The TO-220FP package is designed for easy installation and robust performance, with a fully isolated package that simplifies the use of the device in applications where electrical isolation is required.

The STF32N65M5 also features a low gate charge and low intrinsic capacitances, which contribute to its fast switching performance. This results in lower switching losses, which, combined with the low on-resistance, leads to a highly efficient power conversion process. Furthermore, the device is 100% avalanche tested, ensuring ruggedness and reliability in the field.

STMicroelectronics has a commitment to environmental sustainability, and the STF32N65M5 is no exception. It is designed and manufactured to meet the demands of energy-conscious systems while maintaining compliance with environmental regulations.

Whether you are designing a new power supply or looking to improve the efficiency and reliability of an existing design, the STF32N65M5 from STMicroelectronics offers a compelling solution with its superior electrical characteristics and performance.

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