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STF33N60M2

Part No STF33N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 26A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 45.5nC @ 10V
Max Input Capacitance 1781pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 212273-STF33N60M2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF33N60M2 CAD Model

Description

STF33N60M2 - STMicroelectronics

The STF33N60M2 from STMicroelectronics is a state-of-the-art power MOSFET designed for high-efficiency power conversion applications. This device is part of ST's MDmesh™ M2 series, which is renowned for its outstanding performance in terms of low on-resistance, high switching speed, and reliability. The STF33N60M2 is particularly suited for use in switch-mode power supplies (SMPS), lighting applications, high-efficiency converters, and other power management tasks where energy efficiency is paramount.

With a drain-source voltage (V<sub>DS) of 600V, the STF33N60M2 can safely handle high voltages, making it ideal for both industrial and consumer applications. Its maximum continuous drain current (I<sub>D) is rated at 21A, allowing for the handling of significant power levels. The device features a very low on-resistance (R<sub>DS(on)) of 0.165Ω, which minimizes conduction losses and improves overall system efficiency.

The MOSFET's inherent fast recovery diode is optimized for high-frequency operation and soft switching, contributing to reduced electromagnetic interference (EMI) and increased power density. The STF33N60M2's package is designed with a low parasitic inductance, which further aids in reducing switching losses and improving performance in fast-switching applications.

One of the key advantages of the STF33N60M2 is its enhanced avalanche ruggedness, providing robustness against harsh operating conditions and ensuring a longer lifespan for the device. This feature is particularly important in applications where unexpected voltage transients may occur.

STMicroelectronics has also focused on environmental sustainability with the STF33N60M2. The device is compliant with the European Union’s Restriction of Hazardous Substances (RoHS) directive, which limits the use of certain hazardous materials in electronic and electrical equipment.

In summary, the STF33N60M2 from STMicroelectronics is an advanced power MOSFET that combines high voltage capability, low on-resistance, fast switching, and ruggedness, making it an excellent choice for designers looking to optimize their power conversion systems for both performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1355 $51.0975
110+ $0.9317 $102.4870
170+ $0.9026 $153.4420
230+ $0.8735 $200.9050
300+ $0.8444 $253.3200
400+ $0.7570 $302.8000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,900 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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