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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 950V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 450pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 1.25 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066359-STF6N95K5
Family Name STF6N95K5
Introduction Date January 12, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STF6N95K5 CAD Model

Description

STF6N95K5 - N-channel 950 V, 1.7 Ohm typ., 5.4 A SuperMESH™ K5 Power MOSFET in a TO-220FP package by STMicroelectronics

The STF6N95K5 is a high-performance N-channel Power MOSFET from STMicroelectronics, a part of their SuperMESH™ K5 series, which is renowned for its exceptional energy efficiency and performance in power switching applications. This MOSFET is designed using an advanced technology that achieves the perfect balance between on-resistance and switching performance, offering a significant reduction in conduction and switching losses.

With a breakdown voltage of 950 V, the STF6N95K5 is well-suited for high-voltage applications, ensuring reliable operation even under stressful conditions. It features a typical on-resistance of just 1.7 Ohms, which minimizes power dissipation and improves overall efficiency. The device is capable of delivering a continuous current of 5.4 A, making it an excellent choice for power supply units, lighting applications, and any circuit that requires efficient power conversion.

The TO-220FP package is designed to offer excellent thermal performance and is intended for use in environments where heat dissipation is a critical factor. This package style also allows for straightforward mounting on a printed circuit board and provides good isolation between the backside of the package and the PCB.

Key features of the STF6N95K5 include a fast recovery diode, which is essential for high-efficiency switching, and a 100% avalanche tested design, which guarantees robustness and reliability in applications that may experience unexpected voltage spikes. Furthermore, the device benefits from Zener-protection, which enhances its ability to withstand electrostatic discharge events.

STMicroelectronics has designed the STF6N95K5 to meet the stringent requirements of modern electronic circuits, offering designers a MOSFET that is not only powerful but also reliable and efficient. Whether you're designing power supplies, inverters, or any other application that requires a high-voltage, high-efficiency MOSFET, the STF6N95K5 is an excellent choice that will not disappoint.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2457 $56.0565
100+ $1.0221 $102.2100
155+ $0.9902 $153.4810
210+ $0.9582 $201.2220
270+ $0.9263 $250.1010
365+ $0.8305 $303.1325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 22,000 pieces
MOQ: 45 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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