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STF7N80K5

Part No STF7N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 800V 6A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 13.4nC @ 10V
Max Input Capacitance 360pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 212276-STF7N80K5
Family Name STF7N80K5
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2028
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF7N80K5 CAD Model

Description

STF7N80K5 - N-channel 800 V, 1.7 Ω, 7 A MDmesh™ K5 Power MOSFET in a TO-220FP Package

The STF7N80K5 from STMicroelectronics is a cutting-edge N-channel Power MOSFET that leverages the innovative MDmesh™ K5 technology. This technology integrates a vertical structure, which enables the device to achieve extremely low on-resistance and gate charge, making it a perfect choice for high-efficiency power management applications.

The STF7N80K5 is encapsulated in a TO-220FP package, which is known for its robustness and superior thermal performance. This package is widely accepted in the industry and provides a reliable solution for power circuits. The device boasts an impressive 800 V breakdown voltage, making it suitable for high voltage applications, including switching power supplies, lighting, and power factor correction circuits.

With an on-resistance of just 1.7 Ω and a continuous drain current of 7 A at 25°C, the STF7N80K5 ensures minimal conduction losses and is capable of handling significant power without overheating. The low threshold voltage of this MOSFET allows for better control in the application's power stage, enhancing the overall system efficiency.

One of the key features of this MOSFET is its Zener-protected gate, which provides an intrinsic protection against electrostatic discharges, thus ensuring a high level of reliability in harsh environments. Additionally, the device is characterized by a very low intrinsic capacitance, which results in a faster switching performance, reducing switching losses and improving the power efficiency of the application.

The STF7N80K5 is also RoHS compliant and designed to meet the environmental standards, which demand the reduction of hazardous substances in electronic components. This commitment to environmental sustainability makes the STF7N80K5 an environmentally friendly choice for designers who are looking to create green products.

In summary, the STF7N80K5 N-channel Power MOSFET from STMicroelectronics is a highly efficient, reliable, and environmentally conscious component that is ideal for a wide range of high-voltage power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6410 $65.6400
80+ $1.5352 $122.8160
120+ $1.4823 $177.8760
170+ $1.3765 $234.0050
220+ $1.3236 $291.1920
275+ $1.2705 $349.3875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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