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Same model may have multiple batches, images only for reference.
TPCS8008-H(TE12L,Q
Same model may have multiple batches, images only for reference.

TPCS8008-H(TE12L,Q

Part No TPCS8008-H(TE12L,Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet N-ch 250V 1.7A 8-PIN TSSOP T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSSOP
Continuous Drain Current (ID) 1.7 A
Drain to Source Breakdown Voltage 250 V
Drain to Source Resistance 580 mΩ
Drain to Source Voltage (Vdss) 250 V
Fall Time 20 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 600 pF
Lead Free Yes
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Power Dissipation 1.5 W
Rds On Max 580 mΩ
Rise Time 35 ns
RoHS Compliant
Win Source Part Number 1100806-TPCS8008-H(TE12L,Q
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian TPCS8008-H(TE12L,Q CAD Model

Description

The Toshiba Semiconductor and Storage TPCS8008-H(TE12L,Q is a MOSFET designed for use in a variety of applications.

  • Maximum Voltage Rating: 250V
  • Current Rating: 1.7A
  • Rise Time: 35ns
  • Fall Time: 20ns
  • Package: TSSOP
  • Packaging: Tape and reel

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