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TPC8405(TE12L,Q,M)

Part No TPC8405(TE12L,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6A/4.5A 8SOP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A, 4.5A
Maximum Rds On at Id,Vgs 26 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 1240pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Win Source Part Number 056807-TPC8405(TE12L,Q,M)
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPC8405(TE12L,Q,M) CAD Model

Description

The Toshiba Semiconductor and Storage 056807-TPC8405(TE12L,Q,M) is an N and P-channel FET with a logic level gate feature. It is available in an 8-SOP package and has a maximum power dissipation of 450mW.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate Charge: 27nC @ 10V
  • Maximum Rds On: 26 mOhm @ 3A, 10V
  • Input Capacitance: 1240pF @ 10V
  • In the: open market
  • Supply and Demand Status: of this FET is limited as it is obsolete(EOL)

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