EN
  • EN
  • DE

STFI11N60M2-EP

Part No STFI11N60M2-EP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V I2PAK-FP / N-Channel 600 V 7.5A (Tc) 25W (Tc) Through Hole I2PAKFP (TO-281)
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series MDmesh™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 595mOhm @ 3.75A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.4 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 100 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAKFP (TO-281)
Package / Case TO-262-3 Full Pack, I²Pak
Base Product Number STFI11N
Standard Package 1,500 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278020-STFI11N60M2-EP
Ultra Librarian 3D Model Ultra Librarian STFI11N60M2-EP CAD Model

Description

STFI11N60M2-EP - High-Performance MOSFET by STMicroelectronics

The STFI11N60M2-EP is a cutting-edge power MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This particular MOSFET is part of the MDmesh™ M2 EP series, which is renowned for its excellent energy efficiency and performance in a wide array of power applications. It is specifically designed to address the demanding requirements of electronic systems where energy efficiency and reliability are of paramount importance.

With a drain-source voltage (V<sub>DS) of 600V, the STFI11N60M2-EP is capable of handling high voltage operations while maintaining a low on-resistance (R<sub>DS(on)). This feature is critical for reducing conduction losses and improving overall system efficiency. The device boasts a maximum continuous drain current (I<sub>D) of 11A at 25°C, which ensures that it can manage significant power without overheating or performance degradation.

The MOSFET utilizes STMicroelectronics' second generation of MDmesh™ technology, which combines a vertical structure with a proprietary strip layout to achieve an optimal balance of on-resistance, switching performance, and ruggedness. This technology is particularly effective in minimizing the R<sub>DS(on) area, which is essential for applications that require high power density.

Furthermore, the STFI11N60M2-EP is designed with an integrated fast-recovery body diode, which is highly beneficial for hard-switching applications that necessitate fast and efficient diode recovery times. This feature helps in reducing electromagnetic interference (EMI) and improving the reliability of the power system.

Enclosed in an ISOTOP package, the STFI11N60M2-EP is optimized for use in high-performance applications such as switch-mode power supplies (SMPS), lighting applications, welding equipment, solar inverters, and other power conversion systems. The package is designed for excellent thermal performance and durability, ensuring that the MOSFET can operate reliably even under harsh conditions.

In summary, the STFI11N60M2-EP from STMicroelectronics is a robust and efficient solution for designers looking to enhance the performance and efficiency of their power management systems. Its advanced technology and features make it an ideal choice for a wide range of high-voltage and high-power applications.

You May Also Be Interested in

Fairchild/ON Semiconductor
200V N-Channel MOSFET
Need more? Email Us
NXP / Nexperia
N-channel TrenchMOS FET Rev. 01 — 4 October 2010
Lowest to $6.6447
Renesas Electronics America
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Lowest to $7.5410
Vishay
N-Channel 200-V (D-S) 175C MOSFET
Lowest to $2.7120
Infineon Technologies
OptiMOSTM Power-MOSFET
Lowest to $0.7540
NEC
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Lowest to $0.3361
Hitachi, Ltd
Silicon P Channel MOS FET High Speed Switching
Lowest to $1.4264
Infineon Technologies
Increased MOSFET dv/dt ruggedness
Lowest to $8.2310
NEC
MOS FIELD EFFECT TRANSISTOR
Need more? Email Us

Top Sellers

Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $4.1579
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $2.2891
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.8196
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
Bosch Sensortec
IMU ACCEL/GYRO I2C/SPI 14LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $3.6828
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.9399
Bosch Sensortec
ACCELEROMETER 16LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $11.8797
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0357
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.3053
Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.9204

Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7685 $61.8975
80+ $1.4511 $116.0880
125+ $1.4058 $175.7250
170+ $1.3604 $231.2680
220+ $1.3151 $289.3220
295+ $1.1790 $347.8050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Estimate Shipping
Enter your destination to get a shipping estimate
*
Availability: 7,180 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
Expected Shipping Date
Ship today if order in (HKT)
Supplier Lead-Time Call for availability
Estimate shipping fee
Enter your destination to get a shipping estimate
Estimate Shipping Fee

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess