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STFW3N170

Part No STFW3N170
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1700V 2.6A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1700V (1.7kV)
Continuous Drain Current at 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1100pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 13 Ohm @ 1.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PF
Dimension TO-3P-3 Full Pack
Win Source Part Number 212278-STFW3N170
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STFW3N170 CAD Model

Description

The STFW3N170 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This device is a part of ST's MDmesh™ III series, which is renowned for its outstanding performance in high voltage applications. The STFW3N170 is specifically engineered to address the demanding requirements of modern electronic circuits, providing high efficiency and reliability.

Key Features

  • High Voltage Capability: The STFW3N170 is capable of withstanding voltages up to 1700V, making it suitable for high voltage applications.
  • Low On-Resistance: With an on-resistance of only 1.55 ohms, this MOSFET ensures minimal power loss and improved overall efficiency.
  • Fast Switching Speed: The device offers fast switching performance, which is crucial for reducing switching losses and improving power supply efficiency.
  • 100% Avalanche Tested: Each unit is tested for reliability in avalanche conditions, ensuring robust performance in harsh environments.
  • Low Gate Charge: The low gate charge of the STFW3N170 results in reduced driving power and further enhances its efficiency in high-frequency applications.
  • Improved dv/dt Capability: The device is designed to handle high dv/dt rates, making it suitable for fast-switching applications.

Applications

The versatility of the STFW3N170 allows it to be used in a wide array of applications. It is particularly well-suited for:

  • Switching applications
  • Power supplies
  • Motor drives
  • Lighting applications
  • High voltage converters
  • Welding equipment

Quality and Reliability

STMicroelectronics is committed to delivering products of the highest quality. The STFW3N170 is no exception, with its design and manufacturing processes conforming to the stringent standards set by the industry. Customers can trust in the reliability and longevity of this power MOSFET, which is backed by ST's rigorous testing and quality assurance protocols.

Environmental Considerations

STMicroelectronics is dedicated to environmental stewardship. The STFW3N170 is designed with eco-friendly considerations in mind, adhering to international standards such as RoHS and REACH, ensuring the minimal environmental impact of its products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5888 $51.7760
42+ $2.4249 $101.8458
65+ $2.3430 $152.2950
92+ $2.1792 $200.4864
120+ $2.0972 $251.6640
149+ $2.0153 $300.2797
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,100 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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