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STFW40N60M2

Part No STFW40N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ II Plus
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PF
Package / Case TO-3P-3 Full Pack
Base Product Number STFW40
Other Names 497-15538-5
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278106-STFW40N60M2
Ultra Librarian 3D Model Ultra Librarian STFW40N60M2 CAD Model

Description

STFW40N60M2 - N-channel 600 V, 40 A MDmesh™ M2 Power MOSFET

The STFW40N60M2 from STMicroelectronics is a high-performance N-channel Power MOSFET designed using the second generation of MDmesh™ technology. This power MOSFET is optimized for a wide range of high-voltage applications, including switch-mode power supplies (SMPS), lighting, welding, AC-DC converters, and power factor correction circuits.

With a drain-source voltage (V<sub>DS) of 600 V, the STFW40N60M2 is well-suited for systems that require reliable operation under high voltage conditions. The device boasts an exceptionally low on-resistance (R<sub>DS(on)) of only 0.065 Ω, which contributes to its high efficiency by minimizing conduction losses. Additionally, a continuous drain current (I<sub>D) of 40 A ensures that the MOSFET can handle significant power without compromising performance.

The STFW40N60M2 comes in a fully isolated TO-3PF package, which provides excellent thermal performance and simplifies the assembly process as no insulating pad is required. This package design not only enhances the overall reliability of the MOSFET but also reduces the bill of materials for applications where electrical isolation is necessary.

One of the key features of the MDmesh™ M2 technology is its very low gate charge (Q<sub>g), which leads to reduced switching losses. This allows for faster switching frequencies, which can be beneficial in applications that require high efficiency and power density. The technology also provides an improved dv/dt capability, ensuring stable operation even under harsh switching conditions or in applications with fast-changing voltages.

The STFW40N60M2 is also characterized by its robustness, with a high avalanche ruggedness that makes it suitable for applications that may experience unexpected voltage transients. This robustness, combined with the device's high efficiency and thermal performance, makes the STFW40N60M2 an excellent choice for designers looking to create compact, reliable, and high-performance power conversion systems.

Overall, the STFW40N60M2 MOSFET represents a blend of efficiency, reliability, and performance, making it a top choice for engineers and professionals in the field of power electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.7370 $54.1590
16+ $6.3483 $101.5728
25+ $6.1499 $153.7475
34+ $5.9515 $202.3510
44+ $5.7532 $253.1408
59+ $5.1580 $304.3220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 260 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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