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Same model may have multiple batches, images only for reference.
SI3469DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3469DV-T1-GE3

Part No SI3469DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5A 6-TSOP
Datasheet
SI3469DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 30nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.14W (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 6.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095848-SI3469DV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3469DV-T1-GE3 CAD Model

Description

The Vishay SI3469DV-T1-GE3 is a P-Channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 5A (Ta).

  • Maximum Rds On at Id,Vgs: 30 mOhm @ 6.7A, 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 30nC @ 10V
  • Supply and Demand Status: sufficient
  • Suitable for: discrete semiconductor applications
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.7136 $60.6560
200+ $0.5856 $117.1200
310+ $0.5673 $175.8630
425+ $0.5490 $233.3250
545+ $0.5306 $289.1770
730+ $0.4758 $347.3340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,200 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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