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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Package Tape & Reel
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 30A
Power - Max 260 W
Switching Energy 383µJ (on), 233µJ (off)
Input Type Standard
Gate Charge 163 nC
Td (on/off) @ 25°C 45ns/189ns
Test Condition 400V, 30A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Base Product Number STGB30
Other Names 497-16477-6,497-16477-1,497-16477-2
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277398-STGB30V60F
Ultra Librarian 3D Model Ultra Librarian STGB30V60F CAD Model

Description

The STGB30V60F is a state-of-the-art insulated gate bipolar transistor (IGBT) developed by STMicroelectronics, a global semiconductor leader. This IGBT is designed to meet the efficiency and reliability requirements of a broad range of high-voltage and high-speed power switching applications.

Featuring a voltage rating of 600V and a nominal current rating of 30A, the STGB30V60F is well-suited for applications such as motor drives, uninterruptible power supplies (UPS), solar inverters, and welding equipment. It is encapsulated in a TO-220 package, which is popular for its ease of installation and ability to handle significant power levels.

Key Features

  • High Voltage Capability: With a collector-emitter voltage (V<sub>CE) of 600V, it can efficiently handle high voltage operations.
  • Current Rating: The device can sustain a continuous collector current (I<sub>C) of up to 30A, making it suitable for high power applications.
  • Low On-Voltage Drop (V<sub>CE(sat)): Minimizes conduction losses and improves overall efficiency.
  • High Switching Speed: Fast switching characteristics reduce switching losses and enhance performance in high-frequency circuits.
  • Co-packaged Free Wheeling Diode: Comes with an integrated fast recovery diode, which provides protection during inductive load switching and reduces component count.

Applications

  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Welding Equipment
  • High-Frequency Converters

The STGB30V60F is built with STMicroelectronics' advanced IGBT technology, which offers an optimal trade-off between switching performance and on-state behavior, crucial for efficient energy conversion. Its robustness and reliability are enhanced by features such as a maximum junction temperature of 175°C and a tight parameter distribution, which result in a predictable and stable performance across various conditions.

In summary, the STGB30V60F IGBT is a powerful component that provides designers with a versatile and efficient solution for managing and converting electrical power in demanding industrial, consumer, and energy-related applications.

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