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STGP30M65DF2

Part No STGP30M65DF2
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 650V 30A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 31 Weeks
Features IGBT Trench Field Stop 650 V 60 A 258 W Through Hole TO-220
Manufacturer STMicroelectronics
Package Tube
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STGP30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -497-15841-5, 497-15841-5
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898000-STGP30M65DF2
Ultra Librarian 3D Model Ultra Librarian STGP30M65DF2 CAD Model

Description

STGP30M65DF2 - Silicon Carbide Power Transistor from STMicroelectronics

The STGP30M65DF2 is a state-of-the-art silicon carbide (SiC) power transistor designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This high-performance device is part of the STPOWER product line, specifically engineered for applications that demand high efficiency, reliability, and thermal management.

Key Features

  • Wide Bandgap Technology: The SiC material provides a wider bandgap than traditional silicon, enabling the STGP30M65DF2 to operate at higher temperatures, voltages, and frequencies.
  • High Voltage Rating: With a breakdown voltage of 650V, this power transistor is well-suited for high-voltage applications, ensuring safe operation under stress conditions.
  • Low On-Resistance: The device boasts an on-resistance (RDS(on)) of just 45 mΩ at 25°C, which minimizes conduction losses and improves overall efficiency.
  • Fast Switching Speed: The transistor's fast-switching capabilities reduce switching losses and enhance performance in high-frequency power conversion systems.
  • Robust Design: The STGP30M65DF2 is designed to withstand harsh conditions, offering excellent ruggedness and a high tolerance for harsh environments.

Applications

The versatility of the STGP30M65DF2 makes it ideal for a wide range of applications, including but not limited to:

  • Electric Vehicle (EV) Charging Stations
  • Photovoltaic (Solar) Inverters
  • Uninterruptible Power Supplies (UPS)
  • High-Performance Power Converters
  • Switch Mode Power Supplies (SMPS)

Product Advantages

The incorporation of the STGP30M65DF2 into power electronic systems offers several advantages:

  • Energy Efficiency: The low on-resistance and fast switching reduce power losses, which translates to higher energy efficiency in end applications.
  • Thermal Management: Superior thermal characteristics allow for better heat dissipation, reducing the need for extensive cooling systems and enabling more compact designs.
  • Longevity: The robustness of SiC technology extends the lifespan of the product, leading to reduced maintenance and replacement costs over time.

Overall, the STGP30M65DF2 by STMicroelectronics represents a leap forward in power transistor technology, providing designers with a reliable and efficient component that can significantly enhance the performance of their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3160 $57.9000
61+ $1.9004 $115.9244
95+ $1.8410 $174.8950
130+ $1.7816 $231.6080
168+ $1.7223 $289.3464
225+ $1.5440 $347.4000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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