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IXXH75N60C3D1 Real Image IXXH75N60C3D1 Real Image
Same model may have multiple batches, images only for reference.
IXXH75N60C3D1 Real Image IXXH75N60C3D1 Real Image
IXXH75N60C3D1 Real Image IXXH75N60C3D1 Real Image
Same model may have multiple batches, images only for reference.

IXXH75N60C3D1

Part No IXXH75N60C3D1
Manufacturer IXYS
Catalog IGBTs - Single
Description XPTTM 600V IGBT
Datasheet
IXXH75N60C3D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series GenX3, XPT
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 150A
Current - Collector Pulsed (Icm) 300A
Vce(on) (Maximum) @ Vge, Ic 2.3V @ 15V, 60A
Power - Max 750W
Switching Energy 1.6mJ (on), 800μJ (off)
Input Type Standard
Gate Charge 107nC
Td (on/off) @ 25°C 35ns/90ns
Test Condition 400V, 60A, 5 Ohm, 15V
Reverse Recovery Time (trr) 25ns
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247AD
Win Source Part Number 1191307-IXXH75N60C3D1
Manufacturer Homepage www.ixys.com
Family Name IXXH75N60C3D1
Introduction Date May 04, 2011
ECCN EAR99
Estimated EOL Date 2027
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXXH75N60C3D1 CAD Model

Description

The IXXH75N60C3D1 is a GenX3, XPT IGBT type power transistor manufactured by IXYS.

  • Product: IXXH75N60C3D1
  • Technology: GenX3, XPT IGBT
  • Package: TO-247-3
  • Power Rating: 750W
  • Reverse Recovery Time (trr): 25ns
  • Current Collector Pulsed (Icm): 300A
  • Switching Energy (on): 1.6mJ
  • Switching Energy (off): 800μJ
  • Gate Charge: 107nC
  • Td (on/off) @ 25°C: 35ns/90ns
  • Maximum Collector Current (Ic): 150A
  • Voltage - Collector Emitter Breakdown (Maximum): 600V
  • Vce(on) (Maximum) @ Vge, Ic: 2.3V @ 15V, 60A
  • Operating Temperature: -55°C to 175°C (TJ)
  • Application: Power supplies and motor control

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