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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 12 A
Current - Collector Pulsed (Icm) 24 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A
Power - Max 88 W
Switching Energy 40µJ (on), 136µJ (off)
Input Type Standard
Gate Charge 21.2 nC
Td (on/off) @ 25°C 12ns/86ns
Test Condition 400V, 6A, 22Ohm, 15V
Reverse Recovery Time (trr) 140 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Base Product Number STGP6
Other Names 497-16967
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277363-STGP6M65DF2
Ultra Librarian 3D Model Ultra Librarian STGP6M65DF2 CAD Model

Description

STGP6M65DF2 - High-Efficiency Power Transistor by STMicroelectronics

The STGP6M65DF2 is a state-of-the-art power transistor designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This innovative product is part of STMicroelectronics' MDmesh™ DM2 series, which is renowned for its high energy efficiency and performance in a wide range of power applications.

Constructed with advanced silicon technology, the STGP6M65DF2 is a Super Junction N-channel MOSFET that boasts a breakdown voltage of 650V, making it suitable for high voltage applications. It is designed to handle continuous current up to 6A with low on-state resistance (R<sub>DS(on)) of 0.65Ω, ensuring minimal power loss and heat generation during operation.

The STGP6M65DF2 comes encapsulated in a TO-220 package, which is widely used for its reliability and ease of mounting on printed circuit boards (PCBs). This package provides excellent thermal performance, making it a perfect choice for applications that require efficient heat dissipation. Additionally, its three-pin configuration simplifies circuit design and integration into existing systems.

One of the key features of the STGP6M65DF2 is its fast switching capability, which is critical for improving efficiency in power conversion systems such as switched-mode power supplies (SMPS), lighting applications, solar inverters, and welding equipment. The device's fast switching not only improves performance but also helps in reducing electromagnetic interference (EMI), which is a common challenge in high-speed switching circuits.

Moreover, the STGP6M65DF2 is characterized by a very low gate charge (Q<sub>g), which reduces the power necessary to drive the transistor, further enhancing its overall efficiency. Its robustness is underscored by its high avalanche ruggedness, making it capable of withstanding harsh operating conditions without compromising performance.

STMicroelectronics is committed to environmental sustainability, and the STGP6M65DF2 complies with international environmental standards. It is RoHS compliant and free from hazardous substances, making it a safe choice for both manufacturers and the environment.

In summary, the STGP6M65DF2 from STMicroelectronics is a high-efficiency, robust, and reliable power transistor that offers superior performance for a variety of high voltage applications. Its advanced features make it an ideal component for designers looking to optimize power systems for efficiency, size, and cost.

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