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STGWA30H65FB

Part No STGWA30H65FB
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT / IGBT Trench Field Stop 650 V 60 A 260 W Through Hole TO-247 Long Leads
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series HB
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
Power - Max 260 W
Switching Energy 151mJ (on), 293mJ (off)
Input Type Standard
Gate Charge 149 nC
Td (on/off) @ 25°C 37ns/146ns
Test Condition 400V, 30A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 600
Win Source Part Number 1209573-STGWA30H65FB
Ultra Librarian 3D Model Ultra Librarian STGWA30H65FB CAD Model

Description

The STGWA30H65FB, brought to you by STMicroelectronics, is a cutting-edge silicon carbide (SiC) power MOSFET designed to meet the demands of high-performance power conversion systems. This 650V, 30A SiC MOSFET is part of ST's advanced series of power semiconductors that combine efficiency with high switching speeds and robustness, making it an excellent choice for a wide range of applications.

With its silicon carbide technology, the STGWA30H65FB offers a significant reduction in on-state resistance (RDS(on)) and improved thermal performance compared to traditional silicon devices. This results in higher efficiency and reduced heat generation, which is crucial for maintaining the longevity and reliability of electronic systems.

The device features a maximum operating junction temperature of 175°C, allowing for stable operation even under extreme conditions. Its high threshold voltage ensures immunity to unintended turn-ons, which is particularly important in high-noise environments. Additionally, the STGWA30H65FB boasts a low gate charge and intrinsic capacitances, which lead to reduced switching losses and enable high-frequency operation, thus minimizing the size of passive components and the overall system footprint.

The STGWA30H65FB is optimized for a variety of applications, including but not limited to electric vehicle (EV) chargers, solar inverters, switch-mode power supplies, and motor drives. Its robustness and efficiency make it an ideal choice for engineers looking to enhance system performance while achieving energy savings.

This device is housed in a HiP247 package, which provides excellent thermal performance and is compatible with standard assembly processes. The package is engineered to handle high stress and offers a high level of isolation, making it safe for use in a broad range of electrical environments.

In summary, the STGWA30H65FB from STMicroelectronics represents a leap forward in power MOSFET technology, delivering superior efficiency, faster switching, and high reliability, all of which contribute to the advancement of modern power conversion solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.0875 $64.3500
9+ $13.2000 $118.8000
14+ $12.7875 $179.0250
19+ $12.3751 $235.1269
25+ $11.9625 $299.0625
33+ $10.7250 $353.9250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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