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STGWA8M120DF3

Part No STGWA8M120DF3
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr STMicroelectronics
Series M
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 16 A
Current - Collector Pulsed (Icm) 32 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 8A
Power - Max 167 W
Switching Energy 390µJ (on), 370µJ (Off)
Input Type Standard
Gate Charge 32 nC
Td (on/off) @ 25°C 20ns/126ns
Test Condition 600V, 8A, 33Ohm, 15V
Reverse Recovery Time (trr) 103 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 Long Leads
Base Product Number STGWA8
Standard Package 600
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277365-STGWA8M120DF3
Ultra Librarian 3D Model Ultra Librarian STGWA8M120DF3 CAD Model

Description

STGWA8M120DF3 - Silicon Carbide Power MOSFET from STMicroelectronics

The STGWA8M120DF3 is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This high-performance MOSFET is designed to meet the efficiency and reliability demands of modern high-power applications. It is a key component for those looking to improve power density, reduce switching losses, and operate at high temperatures.

Key Features:

  • High Voltage Rating: This MOSFET is capable of handling voltages up to 1200V, making it suitable for a wide range of high-voltage applications.
  • Low On-Resistance: With an on-resistance (RDS(on)) as low as 80mΩ, it ensures minimal conduction losses and high efficiency in power conversion.
  • High-Speed Switching: The STGWA8M120DF3 is optimized for fast switching, reducing switching losses and enabling high-frequency operation.
  • Robust Thermal Performance: Thanks to its SiC technology, this MOSFET can operate at higher temperatures than traditional silicon MOSFETs, offering enhanced thermal performance and reliability.
  • Reduced Parasitic Inductance: The package design minimizes parasitic inductance, thus improving switching performance and reducing electromagnetic interference (EMI).

Applications:

  • Electric Vehicle (EV) inverters and chargers
  • Industrial motor drives
  • Power supplies for servers, telecom, and data centers
  • Renewable energy systems, including solar inverters and wind turbines
  • High-performance power conversion systems

The STGWA8M120DF3 is not just a component; it's a strategic choice for designers aiming to achieve unparalleled efficiency and reliability in their power systems. Its advanced SiC technology ensures that systems can handle higher power levels and operate in harsh environments without compromising performance. Whether you're developing solutions for the automotive industry, renewable energy, or industrial applications, this MOSFET from STMicroelectronics is an excellent choice for pushing the boundaries of power electronics.

With the STGWA8M120DF3, STMicroelectronics continues to lead the way in semiconductor innovation, providing the building blocks for the next generation of energy-efficient power electronics.

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