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STGWT20H60DF

Part No STGWT20H60DF
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 40A 167W TO3PF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2V @ 15V, 20A
Maximum Power Dissipation 167W
Total Switching Energy(Ets) 209μJ (on), 261μJ (off)
Input Type Standard
Gate Charge 115nC
Turn-on and Turn-off delay time 42.5ns/177ns
Testing Conditions 400V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 1103077-STGWT20H60DF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STGWT20H60DF CAD Model

Description

The STGWT20H60DF is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) produced by STMicroelectronics, a leader in semiconductor solutions. This IGBT is designed to meet the increasing demands of high-efficiency, fast-switching power electronics applications. With its robust and energy-efficient design, the STGWT20H60DF is an ideal choice for a wide range of applications, including motor drives, uninterruptible power supplies (UPS), inverter systems, and renewable energy converters.

Key Features

  • High Current Capability: The STGWT20H60DF is capable of handling continuous collector currents up to 40A, with a maximum of 80A in pulsed mode, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (V<sub>CE) rating of 600V, this IGBT can efficiently manage high voltage operations, ensuring reliable performance in a variety of electrical circuits.
  • Low On-State Voltage Drop (V<sub>CE(sat)): This feature reduces conduction losses and improves overall efficiency, which is critical for energy-sensitive designs.
  • Fast Switching Speed: The device features fast switching characteristics, which minimizes switching losses and improves performance in high-frequency applications.
  • Co-Packaged Diode: The STGWT20H60DF includes a co-packaged fast recovery diode, which provides protection against reverse voltage and reduces the need for external components.

Advanced Technology

STMicroelectronics has integrated its advanced trench gate field-stop technology into the STGWT20H60DF, which enhances the device's performance by offering lower on-state voltage, higher current density, and reduced gate charge. This technology also allows for a more compact and cost-effective design.

Applications

The versatility of the STGWT20H60DF makes it an excellent choice for a variety of switching applications. It is particularly well-suited for hard switching topologies in power supplies, solar inverters, welding equipment, and other high-performance power conversion systems.

Reliability and Quality

STMicroelectronics is committed to delivering high-quality and reliable components. The STGWT20H60DF is no exception, as it undergoes rigorous testing and quality control measures to ensure it meets the industry's highest standards for performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.6858 $59.0574
8+ $16.1527 $129.2216
12+ $15.6479 $187.7748
16+ $15.1432 $242.2912
20+ $14.6385 $292.7700
27+ $13.1243 $354.3561
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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