STH140N6F7-2 Power MOSFET by STMicroelectronics

The STH140N6F7-2 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This Power MOSFET is part of their STripFET™ F7 series, which is renowned for its low on-resistance and low gate charge, making it an ideal choice for high-efficiency power management applications.

Key Features

    
• Type: N-channel
    
• Maximum Continuous Drain Current (ID): 80 A
    
• Drain-source Voltage (VDSS): 60 V
    
• Gate-source Voltage (VGS): ±20 V
    
• On-resistance (RDS(on)): 6.3 mΩ typ.
    
• Input Capacitance (Ciss): 4490 pF
    
• Total Gate Charge (Qg): 84 nC
    
• Package: H2PAK-2
  

Applications

The STH140N6F7-2 is suitable for a wide range of applications, including but not limited to:

    
• Switching regulators
    
• Switching converters
    
• Motor drivers
    
• Power management in computing and telecommunications
  

Performance and Efficiency

The STH140N6F7-2 Power MOSFET is engineered for high-efficiency power conversion. Its low on-resistance minimizes conduction losses, while the optimized gate charge ensures fast switching performance, reducing switching losses. This balance of features makes it an excellent choice for designers looking to improve the energy efficiency of their systems.

Reliability and Robustness

STMicroelectronics has designed the STH140N6F7-2 with reliability in mind. The device is rated for operation at junction temperatures up to 175°C, ensuring stable performance even under high thermal conditions. Additionally, it is 100% avalanche tested, guaranteeing robustness in applications where the MOSFET may be subjected to high-energy pulses.

Environmental Compliance

The STH140N6F7-2 is compliant with the European Union's Restriction of Hazardous Substances (RoHS) directive, making it suitable for use in environmentally-sensitive applications and contributing to the global effort of reducing the environmental impact of electronic components.