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STH180N10F3-6

Part No STH180N10F3-6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 180A H2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series STripFET III
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 114.6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6665pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 315W (Tc)
Rds On (Maximum) @ Id, Vgs 4.5 mOhm @ 60A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package H2PAK
Package TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 760656-STH180N10F3-6
Popularity Medium
Supply and Demand Status Limited
Family Name STH180N10F3-6
Introduction Date October 10, 2011
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STH180N10F3-6 CAD Model

Description

STH180N10F3-6 MOSFET Overview

The STH180N10F3-6 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is part of ST's STripFET™ F3 series, which is renowned for its low on-state resistance and high switching performance. The STH180N10F3-6 is particularly well-suited for high-efficiency power conversion applications in a wide range of electronic systems.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The STH180N10F3-6 boasts an extremely low on-resistance of just 8.5 mΩ (max), which significantly reduces conduction losses and improves overall efficiency.
  • High Drain Current: It is capable of supporting a continuous drain current (I<sub>D) of up to 180 A, making it suitable for high-power applications.
  • 100% Avalanche Tested: This MOSFET is guaranteed to handle high stress in avalanche and commutation modes, ensuring reliability and robustness in tough conditions.
  • Low Gate Charge (Q<sub>g): With a low gate charge, the STH180N10F3-6 enables faster switching, which is critical for reducing switching losses in power conversion circuits.
  • High Threshold Voltage (V<sub>th): The device has a threshold voltage of 4.5 V, which helps to prevent unintentional turn-on of the MOSFET due to noise or voltage fluctuations in the system.

Applications

The STH180N10F3-6 is designed for a variety of high-efficiency applications, including:

  • Synchronous rectification for Switch Mode Power Supplies (SMPS)
  • DC/DC converters
  • High current motor drives
  • Automotive applications
  • Power management solutions

Package and Environmental Compliance

The STH180N10F3-6 is housed in an H²PAK-6 package, which offers excellent thermal performance and is suitable for compact designs. Additionally, the device complies with the RoHS directive, which restricts the use of certain hazardous substances in electronic equipment, making it an environmentally friendly choice for your power management needs.

Overall, the STH180N10F3-6 from STMicroelectronics is a high-performance, reliable, and energy-efficient solution for designers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.4813 $58.2569
32+ $3.6771 $117.6672
49+ $3.5622 $174.5478
68+ $3.4472 $234.4096
87+ $3.3323 $289.9101
116+ $2.9875 $346.5500
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Availability: 7,300 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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