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STI13NM60N

Part No STI13NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A I2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 790pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1103094-STI13NM60N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STI13NM60N CAD Model

Description

STI13NM60N - N-Channel 600V - 0.16 Ohm - 11A MDmesh™ Power MOSFET

The STI13NM60N is a high-performance N-Channel Power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is part of the MDmesh™ series, which is renowned for its excellent energy efficiency and performance in high-voltage applications. It is well-suited for a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-performance drives.

With a drain-source voltage (V<sub>DS) of 600V, the STI13NM60N is capable of handling high-voltage operations with ease, making it an ideal choice for systems that require reliable power management. The device boasts an on-resistance (R<sub>DS(on)) of only 0.16 Ohm, which ensures minimal power loss and enhances overall efficiency, particularly important in power-sensitive designs.

The STI13NM60N can deliver a continuous drain current (I<sub>D) of 11A at 25°C, providing a robust current handling capability. Its threshold voltage (V<sub>GS(th)) is optimized for a wide range of gate drive voltages, allowing for flexible design options. The MOSFET also features a low gate charge (Q<sub>g), which reduces the power required to switch the device on and off, thereby improving the power efficiency of the entire circuit.

STMicroelectronics has engineered the STI13NM60N with advanced MDmesh™ technology, which combines a vertical structure with a proprietary strip layout to yield one of the best R<sub>DS(on) versus area trade-offs. This technology is particularly effective in reducing conduction losses and improving switching performance, which is critical in high-efficiency power conversion applications.

The device is encapsulated in a TO-220 package, which is widely used and favored for its ease of mounting and good thermal performance. It is also designed to meet the stringent industrial standards for reliability and longevity.

In summary, the STI13NM60N from STMicroelectronics is a powerful and reliable component for designers looking to improve the efficiency and performance of their high-voltage power applications. Its cutting-edge technology and robust package make it a smart choice for a wide array of power conversion challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5285 $61.1400
95+ $1.2541 $119.1395
145+ $1.2150 $176.1750
200+ $1.1758 $235.1600
255+ $1.1365 $289.8075
345+ $1.0189 $351.5205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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