EN
  • EN
  • DE

STI30N65M5

Part No STI30N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ V
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 139mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 100 V
Power Dissipation (Max) 140W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI30N
Other Names 497-11330-5,-497-11330-5
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278034-STI30N65M5
Ultra Librarian 3D Model Ultra Librarian STI30N65M5 CAD Model

Description

The STI30N65M5 is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This robust power transistor is designed to deliver efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control, and power management systems.

Key Features

  • Advanced MDmesh™ M5 Technology: The STI30N65M5 utilizes STMicroelectronics' innovative MDmesh M5 technology, which optimizes the device's on-resistance and switching performance, resulting in superior efficiency and thermal performance.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, the STI30N65M5 can handle high voltage applications, making it suitable for industrial and power conversion systems.
  • Low On-Resistance: The low on-resistance (R<sub>DS(on)) of this MOSFET minimizes conduction losses and enhances overall system efficiency, which is critical for energy-sensitive designs.
  • Fast Switching Speed: The fast switching characteristics of the STI30N65M5 reduce switching losses, which is essential for high-frequency operation in modern power electronic circuits.
  • High Current Capability: This power MOSFET can handle continuous drain currents up to 21A, making it capable of driving high current loads with ease.
  • Robust Body Diode: The device features a ruggedized body diode that can withstand hard commutation and challenging environments, providing additional reliability for applications that require a durable component.

Applications

The versatility of the STI30N65M5 makes it an excellent choice for a variety of applications, including:

  • High-efficiency DC/DC converters
  • Welding equipment
  • Uninterruptible power supplies (UPS)
  • Power factor correction (PFC) circuits
  • Solar inverters and photovoltaic systems
  • Electric vehicle (EV) charging stations

Overall, the STI30N65M5 from STMicroelectronics stands out as a high-performance solution for designers looking to improve system efficiency and reliability in high-voltage and high-power applications.

You May Also Be Interested in

Toshiba Semiconductor and Storage
Switching Voltage Regulators
Lowest to $5.4227
Vishay
N-Channel 200-V (D-S) 175C MOSFET
Lowest to $2.7120
Hitachi, Ltd
Silicon P Channel MOS FET High Speed Switching
Lowest to $1.4264
NXP / Nexperia
N-channel TrenchMOS transistor
Need more? Email Us
Rohm Semiconductor
Switching (-30V,-4.0A)
Lowest to $6.7475
Fairchild/ON Semiconductor
P-Channel 2.5V Specified PowerTrench MOSFET
Lowest to $0.1285
Renesas Electronics America
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Lowest to $7.5410
Rohm Semiconductor
Pch -45V -2.0A Power MOSFET
Lowest to $0.2691
Infineon Technologies
Increased MOSFET dv/dt ruggedness
Lowest to $8.2310

Top Sellers

FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $5.2271
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.8196
Vicor Corporation
DC DC CONVERTER 10-50V / 8V – 60VIN , 10V – 50VOUT , 50 – 140W Cool-Power ZVS Buck-Boost Regulator
Lowest to $41.3948
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
Bosch Sensortec
IMU ACCEL/GYRO I2C/SPI 14LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $3.6828
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
Solomon
LCD Display Controller 128-Pin LQFP Tray
Lowest to $7.4300
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0357
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.5143
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Altera
IC CPLD 128MC 10NS 100TQFP
Lowest to $3.3015
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess