The STI90N4F3 is a high-performance, N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of ST's STripFET™ III series, which is renowned for its low on-resistance and low gate charge, making it highly efficient for a wide range of applications.

Key Features

• Low On-Resistance (R<sub>DS(on)): The STI90N4F3 boasts an exceptionally low drain-source on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
• High Current Capability: With a continuous drain current of 80 A, this MOSFET can handle high current loads, making it suitable for demanding power applications.
• Low Gate Charge (Q<sub>g): The low gate charge ensures fast switching performance, which is crucial for applications requiring high-speed operation.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness under stressful conditions.

Applications

The STI90N4F3 is ideal for a broad range of applications, including:

• Switching regulators
• DC-DC converters
• Motor control
• Power management solutions
• Automotive applications

Technical Specifications

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STI90N4F3 is no exception, with its design and manufacturing processes aligned with the stringent industry standards for quality and reliability. This ensures that the product will perform reliably over its intended lifespan, even under harsh environmental conditions.