STL51N3LLH5 - N-channel 30 V, 5.1 mOhm typ., 46 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 package

The STL51N3LLH5 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of power management applications. This MOSFET is part of ST's STripFET H5 series, which is renowned for its low on-resistance and low gate charge, making it an excellent choice for high-performance switching applications.

Key Features

• Low On-Resistance: With a typical on-resistance of just 5.1 mOhm, the STL51N3LLH5 ensures minimal power loss and improved overall efficiency, making it ideal for high current applications.
• High Current Capability: This MOSFET can handle continuous currents up to 46 A, catering to the needs of demanding power systems.
• Advanced PowerFLAT 5x6 Package: The compact and low-profile package allows for excellent thermal performance and space-saving on the PCB.
• 100% Avalanche Tested: Guarantees robust performance and reliability in applications where the MOSFET may be subjected to high stress conditions.
• Low Gate Charge: The device's low gate charge (Qg) ensures fast switching performance, which is critical for reducing switching losses and improving the efficiency of power conversion circuits.

Applications

The STL51N3LLH5 is versatile and can be used in a variety of applications, including:

• DC/DC converters
• Motor control circuits
• Power management solutions
• Synchronous rectification
• Load switches
• High-performance computing

Why Choose STL51N3LLH5?

STMicroelectronics' STL51N3LLH5 is designed for those who need an efficient, reliable, and high-performance solution for their power management systems. Its combination of low on-resistance, high current capability, and fast switching performance makes it an excellent choice for engineers looking to optimize their designs for both performance and size. The robustness of the device, assured by its 100% avalanche testing, adds an extra layer of reliability, ensuring long-term performance under challenging conditions.