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Manufacturer STMicroelectronics
Category Discrete Semiconductor Products
Family FETs - Single
Win Source Part Number 194504-STN1NC60
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STN1NC60 CAD Model

Description

The STN1NC60 is a high voltage N-Channel Power MOSFET from STMicroelectronics, part of their SuperMESH™ MOSFET family. It is designed to provide the best efficiency in switching applications, combining high voltage capability, low on-resistance, and fast switching speed. This power MOSFET is particularly suitable for high efficiency power supplies, power factor correction circuits, and electronic lamp ballasts aimed at energy saving and extended reliability.

Key Features

  • High Voltage Capability: With a breakdown voltage of 600V, the STN1NC60 is well-suited for applications in high voltage circuits, providing robust performance and reliability.
  • Low On-Resistance: The device offers a very low on-resistance of just 1Ω, which helps to minimize power loss and improve overall efficiency when conducting.
  • High Current Rating: With a continuous current rating of 1A, this MOSFET can handle a significant amount of current for various power applications.
  • Fast Switching Speed: The fast switching capability of the STN1NC60 ensures efficient operation in circuits that require rapid switching, such as in Pulse Width Modulation (PWM) applications.
  • 100% Avalanche Tested: Each device is rigorously tested for avalanche performance, ensuring reliability under extreme conditions.
  • Zener-Protected: The MOSFET is equipped with an integrated Zener diode to protect against overvoltage, enhancing its durability and lifespan.

Applications

The STN1NC60 is ideal for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • Electronic lamp ballasts
  • High-efficiency DC-DC converters
  • Motor control

STMicroelectronics' STN1NC60 is a testament to their commitment to providing power components that offer a balanced performance for power efficiency and reliability. It is a preferred choice for designers who require a MOSFET that can deliver high performance in a compact form factor.

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