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Same model may have multiple batches, images only for reference.
SPB08P06P Real Image
Same model may have multiple batches, images only for reference.

SPB08P06P

Part No SPB08P06P
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SIPMOS Power-Transistor | MOSFET P-CH 60V 8.8A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 8.8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 300mOhm at 6.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 13nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 420pF at 25V
Power Dissipation (Maximum) 42W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package PG-TO263-3-2
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1257793-SPB08P06P
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB08P06P CAD Model

Description

The Infineon Technologies SPB08P06P is a P-Channel MOSFET with a Vds - drain-source breakdown voltage of 60V and an Id - continuous drain current of 8.8A.

  • Mounting Technology: SMD
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation: 42W
  • Maximum Rds On @ Id, Vgs: 300mOhm @ 6.2A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 13nC @ 10V
  • Application: Discrete Semiconductor Products
  • Status: Obsolete

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