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IPD60R950C6 Infineon Technologies IPD60R950C6 Real Image IPD60R950C6 Real Image IPD60R950C6 label picture 2 IPD60R950C6 label picture 3 IPD60R950C6 label picture 4 IPD60R950C6 real image IPD60R950C6 real image 2 IPD60R950C6 real image 3 IPD60R950C6 real image 4
Same model may have multiple batches, images only for reference.
IPD60R950C6 Infineon Technologies IPD60R950C6 Real Image IPD60R950C6 Real Image IPD60R950C6 label picture 2 IPD60R950C6 label picture 3 IPD60R950C6 label picture 4 IPD60R950C6 real image IPD60R950C6 real image 2 IPD60R950C6 real image 3 IPD60R950C6 real image 4
IPD60R950C6 Infineon Technologies IPD60R950C6 Real Image IPD60R950C6 Real Image IPD60R950C6 label picture 2 IPD60R950C6 label picture 3 IPD60R950C6 label picture 4 IPD60R950C6 real image IPD60R950C6 real image 2 IPD60R950C6 real image 3 IPD60R950C6 real image 4
Same model may have multiple batches, images only for reference.

IPD60R950C6

Part No IPD60R950C6
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Trans MOSFET N-CH 600V 4.4A 3-Pin(2+Tab) DPAK T/R / Metal Oxide Semiconductor Field Effect Transistor | MOSFET N-CH 600V 4.4A TO252
Datasheet
IPD60R950C6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 4.4A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 950mOhm at 1.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.5V at 130μA
Gate Charge (Qg) (Maximum) at Vgs 13nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 280pF at 100V
Power Dissipation (Maximum) 37W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PG-TO252-3
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1186170-IPD60R950C6
Manufacturer Homepage www.infineon.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IPD60R950C6
Introduction Date January 12, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPD60R950C6 CAD Model

Description

The IPD60R950C6 is an N-Channel MOSFET manufactured by Infineon Technologies.

  • Maximum Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 4.4A
  • Rds On: 950mOhm @ 1.5A and 10V
  • Gate-Source Voltage(th): 3.5V @ 130μA
  • Gate Charge: 13nC @ 10V
  • Input Capacitance: 280pF @ 100V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Operating Temperature: 150°C

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