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STP120N10F4

Part No STP120N10F4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs (Max) ±20V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP120
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278169-STP120N10F4
Ultra Librarian 3D Model Ultra Librarian STP120N10F4 CAD Model

Description

The STP120N10F4 is a highly efficient N-channel Power MOSFET from the renowned semiconductor manufacturer STMicroelectronics. This device is designed to deliver high performance in various applications, including DC-DC converters, motor control, automotive applications, and high-efficiency switching for power management solutions.

Featuring advanced STripFET™ F4 Power technology, the STP120N10F4 offers one of the lowest on-resistance values among silicon MOSFETs in the market, ensuring reduced conduction losses and improved overall efficiency. With a maximum continuous drain current of 120A and a drain-source voltage (V<sub>DS) of 100V, this MOSFET can handle high-current applications with ease.

The STP120N10F4 is optimized for a wide range of temperatures, maintaining stable performance with a maximum junction temperature of 175°C. This feature makes it suitable for high-temperature environments and demanding conditions. Its low gate charge (Q<sub>g) and low input capacitance (C<sub>iss) contribute to fast switching speed, which is critical for applications requiring high-frequency operation.

The device comes in a TO-220 package, which is widely used and suitable for through-hole mounting, making it easy to integrate into various circuit designs. The TO-220 package also provides excellent thermal performance, ensuring that the device can handle significant power without overheating.

Safety and reliability are paramount in power management components, and the STP120N10F4 incorporates features like avalanche ruggedness and 100% avalanche tested, which means it is guaranteed to withstand stressful conditions. This robustness is essential for applications where reliability is critical, such as in automotive and industrial systems.

In summary, the STP120N10F4 N-channel MOSFET from STMicroelectronics is a powerful, efficient, and reliable component for high-performance power management solutions. Its cutting-edge technology and robust design make it a top choice for engineers and designers looking to optimize their power systems for efficiency and reliability.

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