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STP12NK80Z

Part No STP12NK80Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 10.5A TO220AB
Sample
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series SuperMESH™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 5.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2620 pF @ 25 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP12
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 678977-STP12NK80Z
Ultra Librarian 3D Model Ultra Librarian STP12NK80Z CAD Model

Description

The STP12NK80Z is a high-performance N-channel Power MOSFET produced using STMicroelectronics' advanced SuperMESH™ technology, which combines the benefits of reduced on-resistance, high switching speed, and ruggedized device design to offer a superior MOSFET for high-efficiency power applications.

With an impressive breakdown voltage of 800V, this MOSFET is particularly suitable for high voltage applications that require efficient power management, such as switch-mode power supplies, lighting applications (including LED), AC-DC converters, and high-performance motor control circuits.

Key Features:

  • High Voltage Capability: The STP12NK80Z has a drain-source voltage (V<sub>DS) of 800V, making it ideally suited for applications that operate at high voltages.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of only 0.65 ohm, this MOSFET ensures minimal power loss and heat generation during operation, enhancing overall system efficiency.
  • High Current Handling: A continuous drain current (I<sub>D) of 10A provides robust performance for a wide range of applications, including power conversion and regulation tasks.
  • Zener-Protected: The gate-source Zener diodes provide protection against electrostatic discharge (ESD) events, increasing the reliability and longevity of the device in harsh environments.
  • 100% Avalanche Tested: Ensures that the device is capable of withstanding high energy pulses in the avalanche and commutation mode, which is essential for applications that may experience unexpected voltage spikes.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • High-Efficiency DC-DC Converters
  • Power Factor Correction Circuits
  • Electronic Ballasts for Lighting
  • Motor Control Systems

The STP12NK80Z is available in both TO-220 and TO-220FP packages, providing flexibility in design for thermal and space considerations. It is designed to meet the stringent requirements of modern electronic circuits, offering a combination of high performance and reliability for engineers and designers across various industries.

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3618 $51.9596
52+ $1.9379 $100.7708
80+ $1.8773 $150.1840
111+ $1.8168 $201.6648
143+ $1.7562 $251.1366
191+ $1.5745 $300.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,240 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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