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STP12NM50FD

Part No STP12NM50FD
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 1000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 6A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1103629-STP12NM50FD
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Lighting
Ultra Librarian 3D Model Ultra Librarian STP12NM50FD CAD Model

Description

STP12NM50FD - N-Channel MOSFET by STMicroelectronics

The STP12NM50FD is a high-performance N-Channel MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This device is designed to deliver superior power efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control, and power management systems.

Key Features

  • Advanced Technology: The STP12NM50FD is built with STMicroelectronics' MDmesh™ technology, which provides low on-resistance and reduced gate charge, resulting in high switching performance and energy efficiency.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 500V, this MOSFET can handle high voltage applications with ease, making it suitable for industrial and consumer electronics that require robust power conversion.
  • High Current Handling: The device can support a continuous drain current (I<sub>D) of up to 11.4A, enabling it to manage significant power levels in various circuit designs.
  • Low Gate Charge (Q<sub>g): The low gate charge ensures that the device can switch on and off efficiently, which is crucial for high-frequency applications.
  • 100% Avalanche Tested: The STP12NM50FD has been rigorously tested for avalanche ruggedness, ensuring it can withstand tough conditions without performance degradation.

Applications

The versatility of the STP12NM50FD allows it to be used in a diverse set of applications, including:

  • High-efficiency switch-mode power supplies (SMPS)
  • Power factor correction circuits
  • Electronic ballasts for lighting
  • DC-AC inverters for solar energy systems
  • Motor control drivers

Reliability and Performance

The STP12NM50FD is designed to meet the stringent requirements of modern electronic systems. Its robustness and efficiency make it an ideal choice for designers looking to create reliable and energy-efficient products. With the backing of STMicroelectronics' reputation for quality, this MOSFET stands out as a top choice for engineers and product developers.

Environmental and Safety Compliance

STMicroelectronics is committed to environmental sustainability. The STP12NM50FD is compliant with RoHS and other environmental regulations, ensuring that it meets global standards for environmental safety and is suitable for use in eco-friendly products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0614 $58.3770
135+ $0.8709 $117.5715
210+ $0.8443 $177.3030
285+ $0.8166 $232.7310
370+ $0.7900 $292.3000
490+ $0.7080 $346.9200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,050 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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