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STP13NM50N

Part No STP13NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 12A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 960pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 320 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 047360-STP13NM50N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP13NM50N CAD Model

Description

The STP13NM50N is a high-performance N-channel Power MOSFET produced by STMicroelectronics using the innovative MDmesh™ technology. This advanced MOSFET is designed to deliver superior switching performance and high efficiency in a wide range of applications, including power supplies, lighting, motor control, and industrial systems.

Key Features:

  • Voltage Rating: The STP13NM50N boasts a high drain-source voltage (V<sub>DS) of 500 V, making it suitable for high voltage applications.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of just 0.22 ohm, this MOSFET provides excellent conduction efficiency, minimizing energy losses during operation.
  • High Current Capacity: It can handle continuous drain current (I<sub>D) up to 11 A, ensuring robust performance for a wide range of power requirements.
  • MDmesh™ Technology: The utilization of STMicroelectronics' proprietary MDmesh™ technology allows for reduced on-resistance, lower switching losses, and improved overall efficiency compared to traditional MOSFETs.
  • Fast Switching: The fast switching capabilities of the STP13NM50N enable high-frequency operation, which is essential for reducing the size of passive components and improving power density.
  • Temperature Performance: With an operating temperature range of -55°C to 150°C, this MOSFET ensures reliable performance across various environmental conditions.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Motor Control Circuits
  • Power Management Functions
  • Industrial and Automotive Applications

The STP13NM50N from STMicroelectronics is a testament to the company's commitment to providing cutting-edge solutions for power management and conversion. Its robust design, combined with state-of-the-art technology, makes it an ideal choice for designers seeking to optimize their systems for performance, efficiency, and reliability.

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