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STP16NF06L

Part No STP16NF06L
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 16A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 345pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 092390-STP16NF06L
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP16NF06L CAD Model

Description

STP16NF06L - Low Voltage N-Channel MOSFET by STMicroelectronics

The STP16NF06L is a robust and efficient low voltage N-Channel MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is part of the STripFET™ II family and is specifically engineered to deliver high performance in a wide range of applications, including DC-DC converters, power management in portable devices, and motor control circuits.

Key Features

  • Low threshold voltage: The device operates at a low gate threshold voltage, making it suitable for low voltage applications and ensures a low on-state resistance (R<sub>DS(on)) at low gate voltages.
  • High switching efficiency: The MOSFET is optimized for high-speed switching, which contributes to improved system efficiency and reduced switching losses.
  • Low power losses: Features such as low on-resistance and minimal gate charge minimize power losses, enhancing overall energy efficiency.
  • Improved robustness: The STP16NF06L comes with built-in protection features, including a robust gate oxide and enhanced ESD immunity, which increase the reliability and longevity of the device.
  • 100% avalanche tested: Ensures that each device is capable of withstanding high-energy pulses in the avalanche and commutation modes, adding to the MOSFET's ruggedness.

Specifications

  • Drain-source voltage (V<sub>DSS): 60V
  • Continuous drain current (I<sub>D): 16A
  • Power dissipation (P<sub>D): 45W
  • Low threshold voltage (V<sub>GS(th)): 2V (typical)
  • Low on-state resistance (R<sub>DS(on)): 0.065Ω (max)
  • Operating temperature range: -55°C to 175°C

Applications

The STP16NF06L is suitable for a variety of applications that require high efficiency and power density. It is commonly used in:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC-DC converters
  • Power management for portable devices
  • Motor control circuits
  • Automotive and industrial applications

Overall, the STP16NF06L MOSFET from STMicroelectronics is a high-quality component that offers a combination of low power consumption, high efficiency, and reliability, making it an excellent choice for designers seeking to optimize their power-sensitive applications.

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