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STP40N65M2

Part No STP40N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 32A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 56.5nC @ 10V
Max Input Capacitance 2355pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 99 mOhm @ 16A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1005455-STP40N65M2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP40N65M2 CAD Model

Description

STP40N65M2 - N-channel 650 V, 0.065 Ω typ., 40 A MDmesh™ M2 Power MOSFET in a TO-220 package

The STP40N65M2 from STMicroelectronics is a state-of-the-art N-channel Power MOSFET designed with the innovative MDmesh™ M2 technology. This advanced power MOSFET is tailored to achieve extremely low on-resistance and high switching performance, making it an ideal choice for a wide range of high-efficiency applications.

With a drain-source voltage (VDS) of 650 V, the STP40N65M2 can handle high voltage operations with ease, providing a robust solution for demanding power supply environments. The device boasts a very low typical on-resistance (RDS(on)) of just 0.065 Ω, which significantly reduces conduction losses and improves overall system efficiency.

Capable of delivering a continuous drain current (ID) of 40 A at 25°C, this MOSFET can manage substantial power without compromising performance. The high current capability coupled with an excellent figure of merit (FOM) makes the STP40N65M2 an excellent choice for high-power switching applications such as Power Factor Correction (PFC) circuits, LED lighting solutions, welding equipment, and solar inverters.

The TO-220 package is widely appreciated for its robustness and excellent thermal performance, ensuring reliable operation even under high stress conditions. The package is designed for easy mounting on a heatsink, which is crucial for maintaining optimal temperatures and extending the lifespan of the device.

Moreover, the STP40N65M2 incorporates fast recovery diode characteristics, which minimizes switching losses and reduces electromagnetic interference (EMI), contributing to the design of quieter and more EMI-compliant systems.

In summary, the STP40N65M2 is a high-performance, efficiency-focused Power MOSFET that integrates STMicroelectronics' cutting-edge technology to meet the requirements of modern high-power electronic systems. Whether you're designing for industrial applications, renewable energy solutions, or advanced power management systems, the STP40N65M2 offers the reliability and performance needed to push the boundaries of power conversion efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.7574 $61.8462
30+ $3.9039 $117.1170
46+ $3.7815 $173.9490
64+ $3.6602 $234.2528
82+ $3.5378 $290.0996
110+ $3.1716 $348.8760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,870 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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