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STP4NB30

Part No STP4NB30
Manufacturer STMicroelectronics
Catalog Electronic Wholesale
Description N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh™ MOSFET
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Manufacturer STMicroelectronics
Win Source Part Number 1261750-STP4NB30
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP4NB30 CAD Model

Description

STP4NB30 - N-Channel 300V - 3.6A - TO-220 Power MOSFET

The STP4NB30 from STMicroelectronics is a robust and high-performance N-Channel Power MOSFET designed to deliver efficient power management and switching. This device is housed in the industry-standard TO-220 package, which provides excellent thermal performance and is suitable for a wide range of applications.

With a drain-source voltage (V<sub>DS) of 300V, the STP4NB30 is capable of handling high voltage applications with ease. The device also boasts a continuous drain current (I<sub>D) of 3.6A at 25°C, making it suitable for high current operations. Its low gate charge (Q<sub>g) and low threshold voltage (V<sub>GS(th)) ensure that it can be driven with minimal power loss, enhancing the overall efficiency of the system it is incorporated into.

The STP4NB30 features a fast switching speed, which is crucial for applications that require quick response times. The device's low on-resistance (R<sub>DS(on)) minimizes conduction losses and offers improved power efficiency. This characteristic is particularly important in applications such as switch-mode power supplies, DC-DC converters, motor control circuits, and other power-intensive applications.

For protection and reliability, the STP4NB30 incorporates an avalanche rugged technology, which ensures that the device can withstand high energy pulses in the avalanche and commutation modes. This makes it an ideal choice for applications that may experience unexpected voltage transients.

Overall, the STP4NB30 is designed to meet the stringent requirements of modern electronic circuits, providing a combination of high voltage capability, low power dissipation, and fast switching performance. This MOSFET is a testament to STMicroelectronics' commitment to providing power solutions that enhance the efficiency and reliability of electronic systems across various industries.

Key features of the STP4NB30 include:

  • Drain-source voltage (V<sub>DS): 300V
  • Continuous drain current (I<sub>D): 3.6A
  • Low gate charge (Q<sub>g) for reduced switching losses
  • Low threshold voltage (V<sub>GS(th)) for ease of drive
  • High-speed switching capability
  • Low on-resistance (R<sub>DS(on)) for improved efficiency
  • Avalanche rugged technology for enhanced robustness
  • TO-220 package for optimal thermal performance

Whether for power supply units, lighting systems, or industrial controls, the STP4NB30 is a reliable and efficient solution for your power switching needs.

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