STP5N95K3 - N-Channel MOSFET by STMicroelectronics

The STP5N95K3 is a high-performance N-channel Power MOSFET produced by the renowned semiconductor manufacturer STMicroelectronics. This MOSFET is part of ST's MDmesh™ K3 series, which is known for its excellent efficiency in a wide range of applications. The device is designed to meet the demanding requirements of modern electronic circuits, providing low on-resistance, high blocking voltage, and the ability to handle significant power levels.

Key Features

• High Voltage Capability: The STP5N95K3 boasts a high drain-source voltage (V<sub>DS) of 950V, making it suitable for high voltage applications.
• Low On-Resistance: With an R<sub>DS(on) value as low as 1.3 Ω, this MOSFET ensures minimal power loss and improved efficiency in electronic circuits.
• Low Gate Charge: The device features a low gate charge (Q<sub>g), which reduces switching losses and enables faster switching speeds.
• High Current Capacity: It is capable of handling continuous drain currents (I<sub>D) up to 4.4 A, making it robust for various power applications.
• 100% Avalanche Tested: Each unit is thoroughly tested for avalanche ruggedness, ensuring reliability under extreme conditions.

Applications

The STP5N95K3 MOSFET is ideal for a diverse range of applications, including:

• Switching power supplies
• Power converters
• Motor control systems
• Lighting and LED drivers
• Adapters and chargers

Package and Quality

This MOSFET comes in a TO-220 package, which is widely used in commercial and industrial applications due to its robustness and ease of mounting. STMicroelectronics also ensures that the STP5N95K3 meets stringent quality standards, providing a reliable component for your power management solutions.

With its combination of high voltage capability, low on-resistance, and high current handling, the STP5N95K3 from STMicroelectronics is a versatile and efficient choice for designers seeking to optimize their power circuits.