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STP7NM60N

Part No STP7NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 5A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 363pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 054274-STP7NM60N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP7NM60N CAD Model

Description

STP7NM60N Power MOSFET by STMicroelectronics

The STP7NM60N is a cutting-edge power MOSFET developed by STMicroelectronics, a global semiconductor leader renowned for its innovative and high-performance components. This particular MOSFET is designed to meet the rigorous demands of modern electronic circuits, offering a blend of efficiency, reliability, and power handling capabilities.

With a drain-source voltage (VDS) of 600V, the STP7NM60N is well-suited for high-voltage applications. It is capable of supporting significant voltage levels without succumbing to breakdown, making it ideal for use in power supplies, lighting circuits, and other high-voltage systems. Additionally, the device boasts a continuous drain current (ID) of 7A, which allows it to handle considerable power without overheating or failing.

The STP7NM60N utilizes STMicroelectronics' advanced MDmesh™ technology. This innovative design approach minimizes on-resistance (RDS(on)) and reduces switching losses, providing high efficiency in power conversion applications. The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, which is beneficial for low-power circuits and helps reduce overall power consumption.

Featuring a TO-220 package, the STP7NM60N offers a robust and reliable form factor that is easy to integrate into a wide range of electronic products. The package is designed to optimize thermal performance, ensuring that the MOSFET operates within its safe temperature range even under high-current conditions. This thermal efficiency extends the life of the product and increases the reliability of the systems in which it is used.

Moreover, the STP7NM60N is compliant with the stringent RoHS and Halogen-Free standards, reflecting STMicroelectronics' commitment to environmental sustainability and the production of eco-friendly products. Customers who are environmentally conscious can be assured that this MOSFET aligns with global efforts to reduce hazardous substances in electronic components.

In summary, the STP7NM60N from STMicroelectronics is a high-performance, efficient, and reliable power MOSFET that is well-suited for a variety of high-voltage and power-intensive applications. Its advanced technology and robust packaging make it a smart choice for designers and engineers looking to enhance their electronic designs with a superior power management solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2017 $66.0510
65+ $1.8066 $117.4290
100+ $1.7501 $175.0100
140+ $1.6937 $237.1180
180+ $1.6373 $294.7140
240+ $1.4678 $352.2720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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