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STP8NS25

Part No STP8NS25
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 51.8nC @ 10V
Max Input Capacitance 770pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 141755-STP8NS25
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP8NS25 CAD Model

Description

STP8NS25 - N-channel 250V - 0.085Ω - 8A - TO-220 Power MOSFET

The STP8NS25 from STMicroelectronics is a robust and efficient N-channel Power MOSFET designed to deliver high performance in a wide range of applications. With its advanced technology, this MOSFET is an ideal choice for power supply, lighting, motor control, and industrial applications requiring high voltage and current capabilities.

The STP8NS25 features a drain-source voltage (V<sub>DS) of 250V, which enables it to handle high voltage applications with ease. Its low on-state resistance (R<sub>DS(on)) of just 0.085Ω minimizes power losses and improves overall efficiency, making it suitable for high-efficiency power management systems.

With a continuous drain current (I<sub>D) of 8A at 25°C, this MOSFET can drive significant loads while maintaining a low thermal footprint. Its TO-220 package is widely recognized for its excellent thermal performance and ease of mounting, which simplifies the design and manufacturing process for power electronics engineers.

The STP8NS25 is also characterized by its fast switching speed, which is crucial for reducing switching losses and improving the performance of power converters and inverters. This, in conjunction with its robustness against repetitive avalanche events, ensures reliable operation even under stressful conditions.

Additional features of the STP8NS25 include a gate charge (Q<sub>g) optimized for low gate driving power, which is beneficial in reducing the overall power consumption of the system. The device is also 100% avalanche tested, which guarantees its ruggedness and reliability in applications where the MOSFET is subjected to high-energy pulses.

STMicroelectronics has equipped the STP8NS25 with all the necessary protection features to ensure a long operational life, including a built-in Zener diode for Electrostatic Discharge (ESD) protection. This feature safeguards the device from unexpected voltage spikes that could potentially cause damage.

In summary, the STP8NS25 Power MOSFET by STMicroelectronics is a highly capable component that combines high voltage and current handling with low on-state resistance and fast switching speeds, making it a versatile choice for a multitude of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5778 $52.0020
215+ $0.4741 $101.9315
330+ $0.4593 $151.5690
450+ $0.4445 $200.0250
585+ $0.4297 $251.3745
780+ $0.3852 $300.4560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,646 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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